PART |
Description |
Maker |
VID160-12P1 VIO160-12P1 VDI160-12P1 |
IGBT Modules: Boost Configurated IGBT Modules IGBT Modules in ECO-PAC 2
|
IXYS[IXYS Corporation]
|
MID100-12A3 MID200-12A4 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT IGBT Modules - Short Circuit SOA Capability Square RBSOA 270 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
|
SKM50GAL123D SKM50GB123D SKM50GB123D1 |
SEMITRANS? M IGBT Modules SEMITRANS垄莽 M IGBT Modules SEMITRANS㈢ M IGBT Modules
|
Semikron International
|
M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V From old datasheet system HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor] ETC Mitsubishi Electric Corporation
|
VUB145 VUB145-16NO1 VUB116 VUB116-16NO1 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 95 A, 1200 V, N-CHANNEL IGBT Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
VID75-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID50-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
SEMIX202GB066HDS08 |
Trench IGBT Modules 270 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
SEMIX252GB126HDS |
Trench IGBT Modules 270 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|